Issue 15

K. V

ogel et alii, Fra

ttura ed Integrit

à Strutturale, 15

(2011) 21-28;

DOI: 10.3221/IG

F-ESIS.15.03

com dur req Th all ove

ponents an ing the man uired to char e behaviour o technologies rview of diff

d have to be ufacturing p acterise such f the structu for joining erent bondin

joined by w rocess and t structures. re depends o two or mor g technologi nding icon Direct nding (SDB) th and witho sma activatio odic Bondin ) ermo mpression nding tectic Bondin

afer bonding o provide da n the bonde e substrates es [2, 3].

. To ensure ta for furth d interface an directly or rial ed wafers of y orientation g with natur ical, or therm n, borosilicat

their functio er FE-simula d the bondi using certain

nality and re tions, signifi ng process it intermediat

liability as w cant materia self. Wafer b e layers. Tab rature perature bo 400 °C, mperature b 1100 °C 450 °C

ell as the qu l parameters onding descr . 1 provides

ality are ibes an

Bo

Mate

Tempe low tem 110 … high te 800 … 210 …

Without intermedia

silicon (wafe and basic al, thin al oxide ) e glass

rs

nding onding

Sil Bo wi pla

polish of an dopin chem silico

te layer

ut

n

An (AB

g

Th Co Bo Eu

mater

ials such as C

u, Au, Ti

300 …

400 °C

363 °C, 280 °C, 350 °C, 77 °C emperature

With intermedia

g

subst

rate and Au

Au-Si Au-Sn Cu-Sn Al-Si 5

te layer

Ad

hesive Bond

ing

silico polym (ceram epoxy ceram

n / glass, pla ers, special m ics, metals, resins, UV ic adhesives rate + glass f hin the pack s technology temperatur e done using face can be ed mode is th a with a con tionally bias t on the su he pre-bond nds. For hyd he water mo y depends on s. A subseque , the water m ial. The wafe temperature iew of bondin

stics /

… 300 °C

room t

aterials PCB, tapes), adhesives, , photo resist rit - substrate

s

Gl

as Frit Bondi

ng

subst

430 °C

T

able 1 : Overv

g technologie

s.

In like clea tem low Bes in a fre 100 To hyd tem tem con num the out bon for

particular, dir in eutectic n and smoo peratures ha pressure pl ides remote fine vacuum quency of 13 V [4]. understand rophilic fus peratures in perature is tacting the w ber of silan bond streng side or throu ds between m covalent si

ect bonding or adhesive b th surfaces ve to be redu asma or ion and sequenti with typica .56 MHz is u the mechani ion bonding order to dev caused by hy afers. The b ol groups (Si th between gh the nativ the silanol g loxane bond

has a major a onding are r before annea ced. This red beam treatm al plasma, a c l ranges of 1 sed. Compar sm of a pla . The proce elop strong drogen bon onding stren -OH) and wa the two waf e oxide to th roups. By in s [5-8].

dvantage wit equired. Thi ling them to uction can b ent. The sur ommonly us 0 Pa to 20 P ed to conven sma treatmen ss includes t covalent bo ds between t gth especiall ter molecule ers. Thereby e bulk mater creasing the

aging proces uses the for es up to 110 surface activ activated by e reactive io tinuous gas f voltage the i rface, it is n ing at room rophilic dire lecules loca the number nt heat treat olecules dif rs move clos the opposin

s because no mation of co 0 °C. For m ating proced a variety of n-etching (RI low in the re ons are only ecessary to e temperatur ct bonding, t ted on the o of hydrogen ment (anneal fuse out eith er towards ea g silanol gro

additional in valent bonds any applica ures prior to low pressure E). The RIE actor chamb accelerated b xplain the p e and an an he bonding pposing waf bonds and ing) is carried er along the ch other and ups react wi

termediate la for joining tions these h bonding suc plasma mo -system oper er. An opera y approxima rocedure of nealing at h process at ro er surfaces a therefore on out, to incr interface to form hydro th each othe

yers two igh h as des. ates tion tely the igh om fter the ease the gen r to

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