Issue 15

K. Vogel et

alii, Frattura ed

Integrità Struttu

rale, 15 (2011)

21-28; DOI: 10

.3221/IGF-ESIS.

15.03

C di

rack pro rect bo

pagati nded si

on in m licon-si

icro-ch licon w

evron-t afers

est sam

ples of

Kl Ch kla

aus Vogel emnitz Unive us.vogel@s20 tlef Billep unhofer Resea STRACT . W tain interme ect bonding ition to the lf. It can va her toughne e fracture to cro-chevron merical anal e maximum ess intensity ensity coeffi ck. The str gth itself. e paper is imation of d atments and YWORDS . C

, Dirk Wu rsity of Techno 05.tu-chemni , Maik Wi rch Institutio

ensch, Ale logy, 09107 tz.de, dirk.wu emer n for Electron

xey Shapo Chemnitz ensch@zfm.tu

rin, Jan M -chemnitz.de

ehner

De Fra

Technologie-C

ic Nano Syste

ms ENAS,

ampus 3, 091

26 Chemnitz ;

afer bondin diate layers technology wafer mat ry for differ ss of the bo ughness is -specimen, ysis with exp force is m coefficient cient is the ess intensity focused on imensionle annealing t ompliance m

g describe . Current inv . It is carrie erials, the t ent pre-trea nded interf a suitable va the fractur erimental m easured dur can be det compliance coefficien the micro ss stress inte emperatures ethod; FE

s all techno estigations d out witho oughness o tments. Fur ace. lue to descr e toughnes easuremen ing a micro ermined by method. Th t can be dir chevron-tes nsity coeffi on the mea -analysis; Fr

logies for j are focused ut intermed f the bonde thermore, a ibe the dam s can be d t of the max -chevron-te a FE-simu e complian ectly derive t for direct cient as a fu sured maxi acture tough

oining two on so-calle iate layers d interface n increase o age behavio etermined imum force st using a M lation only. ce of the wh d from the bonded sil nction of ge mum force ness; Micro

or more s d low tempe and at temp also depend f the annea ur of the bo either num . ode I load One possib ole specime simulated icon-silicon ometry, the are analysed -chevron-te

ubstrates di rature bond eratures be s on the b ling temper nded interf erically or ing. The m ility to esti n increases compliance wafers. Ad influence o and discuss st; Silicon d

rectly or us ing as a spe low 400 °C onding proc ature leads ace. Based o by combin inimum of mate the st with a grow and the cr ditional to f different p ed. irect bondin

ing cial . In ess to a n a ing the ress ing ack the re

A B cer dir add itse hig Th mi nu Th str int cra len Th est tre

g.

K E

I N M

TRODUCTIO

N

icro E comp millim

lectro Mech lex by using etre range (

anical System different m smaller than

s (MEMS) a aterials in on 100 µm) wh

re applied in e system. ME ich determin

a wide indus MS have at es its functio

trial range. T least one ty n [1]. They

heir structur pical compon often consist

es become m ent size in s of two or m

ore ub ore

21