PSI - Issue 23

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Available online at www.sciencedirect.com Structural Integrity Procedia 00 (2019) 000 – 000 Structural Integrity Procedia 00 (2019) 000 – 000

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Procedia Structural Integrity 23 (2019) 601–606

© 2019 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of the scientific committee of the ICMSMF organizers © 201 9 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of the scientific committee of the IC MSMF organizers. films. Fourier-transform inf ared spectr scopy (FTIR) is one of the few methods that allow detection bonds of light elements, in particular - hydroge . Hydrogen is k wn to be a frequent contaminant in AlN films grown by ALD me hod, it may form different bonds with nitrog n, e.g. amino ( – NH2) r imide ( – NH) groups, which impair the qual y of the resulting fil . Which is why, it is important o inves igate the phenomenon of ydrog n as well as to search for he suitable methods to eliminate or at le st r duce its qu nti y. In thi work several samples have been prepared using different precursors, substrates and deposition param ters and ch racterized using FTIR and additio al t chniques such as AFM, XPS and EDS to provide a comparative and comprehensive analysis of topography, morphology and chemical composition of AlN thin films. © 201 9 The Authors. Published by Elsevier B.V. This is an ope access article under CC BY-NC-ND lic nse (http://creativecommon org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of the scientific committee of the IC MSMF organizers. This study focuses on structural imperfections caused by hydrogen impurities in AlN thin films obtained using atomic layer deposition method (ALD). Currently, there is a severe lack of studies regarding the presence of hydrogen in the bulk of AlN films. Fourier-transform infrared spectroscopy (FTIR) is one of the few methods that allow detection bonds of light elements, in particular - hydrogen. Hydrogen is known to be a frequent contaminant in AlN films grown by ALD method, it may form different bonds with nitrogen, e.g. amino ( – NH2) or imide ( – NH) groups, which impair the quality of the resulting film. Which is why, it is important to investigate the phenomenon of hydrogen as well as to search for the suitable methods to eliminate or at least reduce its quantity. In this work several samples have been prepared using different precursors, substrates and deposition parameters and characterized using FTIR and additional techniques such as AFM, XPS and EDS to provide a comparative and comprehensive analysis of topography, morphology and chemical composition of AlN thin films. This s udy focuses on struct al imperf ctions caus d by hydrogen impurities in AlN thi films obtain d using atomic layer depositi n method (ALD). Currently, there is a severe lack studi s regarding the presence of hydr gen in the bulk of AlN Keywords: thin-films, aluminum nitride, Fourier-transform infrared spectroscopy, hydrogen impurities, structural analysis. Keywords: thin-films, aluminum nitride, Fourier-transform infrared spectroscopy, hydrogen impurities, structural analysis. 9th International Conference on Materials Structure and Micromechanics of Fracture Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy Rashid Dallaev a,b , Nikola Papěž a* , Dinara Sobola a,b , Shikhgasan Ramazanov c , Petr Sedlák a a Department of Physics, Faculty of Electrical Engineering and Communications, Brno University of Technology, Technická 2848/8, Brno, 61600, Czech Republic b Central European Institute of Technology, Purkyňova 123, 61600 Brno, Czech Republic c Dagestan State University,Faculty of Physics, Department of condensed matter physics 367002, Dagestan Republic, Makhachala, st. Gadzhieva 9th International Conference on Materials Structure and Micromechanics of Fracture Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy Rashid Dallaev a,b , Nikola Papěž a* , Dinara Sobola a,b , Shikhgasan Ramazanov c , Petr Sedlák a a Department of Physics, Faculty of Electrical Engineering and Communications, Brno University of Technology, Technická 2848/8, Brno, 61600, Czech Republic b Cen ral European Institute of Te h ology, Purkyňova 123, 616 Brno, Czech Republic c Dagestan State University,Faculty of Physics, Department of condensed matter physics 367002, Dagestan Republic, Makhachala, st. Gadzhieva Abstract Abstract

* Corresponding author. Tel.: +420-607-335-321 E-mail address: nikola.papez@vutbr.cz * Corresponding auth r. Tel.: +420-607-335-321 E-mail address: nikola.papez@vutbr.cz

2452-3216 © 2019 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of the scientific committee of the IC MSMF organizers. 2452-3216 © 2019 The Authors. Published by Elsevier B.V. This is an ope acces article under CC BY-NC-ND lic nse (http://creativecommon org/licenses/by-nc-nd/4.0/)

Peer-review under responsibility of the scientific committee of the IC MSMF organizers.

2452-3216 © 2019 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of the scientific committee of the ICMSMF organizers 10.1016/j.prostr.2020.01.152