PSI - Issue 20

Sleptsov O.I. et al. / Procedia Structural Integrity 20 (2019) 130–135

135

Sleptsov O.I. et al. / Structural Integrity Procedia 00 (2019) 000–000

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specimens in the process of sensitization heat-ing leads to the formation of segregations tending to equilibrium contents received by Stremel M.A. (1988), i.e., to an accelerated redistribution of silicon atoms towards the interface — grain boundaries. Notably, while the degree of sensitization heating is under 650–7000 °C the silicon concentration throughout the length of the border is almost the same, at higher temperatures of sensitization heating, with-in the grain boundaries, areas of high and low silicon concentrations are found, corresponding to cluster preprecipitations of silicon-containing phases.. Acknowledgements

This research has been supported by Ministry of Science and Education of Russian Federation (Project III.28.1).

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