PSI - Issue 65

Svetlana V. Ustiuzhanina et al. / Procedia Structural Integrity 65 (2024) 295–301 Ustiuzhanina S.V. et al. / Structural Integrity Procedia 00 (2024) 000–000

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Zakutayev, A., 2021. Synthesis of Zn 2 NbN 3 ternary nitride semiconductor with wurtzite-derived crystal structure. J. Phys.: Condens. Matter., 33, 354003. Zakutayev, A., Bauers, S.R., Lany, S., 2022. Experimental synthesis of theoretically predicted multivalent ternary nitride materials. Chem. Mater. 34(4), 1418–1438. Zhuk, S., Kistanov, A.A., Boehme, S.C., Ott, N., La Mattina, F., Stiefel, M., Kovalenko M.V., Siol, S., 2021. Synthesis and characterization of the ternary nitride semiconductor Zn 2 VN 3 : theoretical prediction, combinatorial screening, and epitaxial stabilization. Chem. Mater. 33(23), 9306 9316. Zhuk, S., Wieczorek, A., Sharma, A., Patidar, J., Thorwarth, K., Michler, J., Siol, S., 2023. Combinatorial reactive sputtering with auger parameter analysis enables synthesis of wurtzite Zn 2 TaN 3 . Chem. Mater. 35(17), 7069–7078.