PSI - Issue 42

Neha Duhan et al. / Procedia Structural Integrity 42 (2022) 863–870 Duhan et al./ Structural Integrity Procedia 00 (2019) 000 – 000

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alloy semiconductor are taken as a function of the Si concentration present in the alloy. As the Burgers vector is defined in terms of the lattice constant, it will have a different value for different Si concentrations in Si x Ge 1-x . The Peach-Koehler force of the edge dislocation is estimated for fifteen alloys with different concentrations of Si between 0 and 1. Also, five different values of the temperature change between 300 K and 500 K are considered for two cases of the heat flux acting normal to the glide plane and along the glide plane of the dislocation. There is an increase in Peach-Koehler with an increase in Si concentration above 0.2 for both the cases of the heat flux application at all temperatures. However, for Si concentration between 0 and 0.2, the Peach-Koehler force increases for heat flux along the glide plane. The increase in temperature value increases the overall values of Peach-Koehler force for heat flux normal to the glide plane and decreases for heat flux along the glide plane. Acknowledgements The Authors would like to acknowledge the support given by the Indian Institute of Technology Roorkee, India, for providing all the facilities required to carry out the research work. The financial support given by the Dean of Resources & Alumni Affairs (DORA) of the Indian Institute of Technology Roorkee, India, for participation in ECF23 is gratefully acknowledged. References Abrosimov, N.V., Alex, V., Dyachenko-Dekov, D.V., Iunin, Y.L., Nikitenko, V.I., Orlov, V.I., Rossolenko, S.N., Schroeder, W., 1997. Dislocation and kink motion study in the bulk SiGe alloy single crystals. Materials Science and Engineering: A 234, 735-738. Big-Alabo, A., 2021. Finite element modelling and optimization of Ge/SiGe superlattice based thermoelectric generators. SN Applied Sciences 3(2), 1-10. Dismukes, J. P., Ekstrom, L., Steigmeier, E. F., Kudman, I., Beers, D. S., 1964a. Ther mal and electrical properties of heavily doped Ge‐Si alloys up to 1300 K. Journal of Applied Physics, 35(10), 2899-2907. Dismukes, J.P., Ekstrom, L., Paff, R.J., 1964b. Lattice parameter and density in germanium-silicon alloys1. The Journal of Physical Chemistry 68(10), 3021-3027. Duhan, N., Patil, R.U., Mishra, B.K., Singh, I.V., Pak, Y.E., 2021. Thermo-elastic analysis of edge dislocation using extended finite element method. International Journal of Mechanical Sciences 192, 106109. Duhan, N., Patil, R.U., Mishra, B.K., Singh, I.V., Pak, Y.E., 2022. Nonlinear thermo-elastic analysis of edge dislocations with Internal Heat Generation in Semiconductor Materials. Mechanics of Materials, 104322. Gracie, R., Ventura, G., Belytschko, T., 2007. A new fast finite element method for dislocations based on interior discontinuities. International Journal for Numerical Methods in Engineering 69(2), 423-441. Gracie, R., Oswald, J., Belytschko, T., 2008. On a new extended finite element method for dislocations: core enrichment and nonlinear formulation. Journal of the Mechanics and Physics of Solids, 56(1), 200-214. Huang, L., Breese, M.B.H. and Teo, E.J., 2005. Characterisation of 60° misfit dislocations in SiGe alloy using nuclear microscopy. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 231(1-4), 452-456. Iunin, Y.L., Nikitenko, V.I., Orlov, V.I., Abrosimov, N.V., Rossolenko, S.N., Schröder, W., 1996. Investigation of the Dislocation Motion in the Bulk SiGe Crystals. In Solid State Phenomena (Vol. 47, pp. 425-430). Trans Tech Publications Ltd. Kasper, E., Lyutovich, K., 2002. Properties of silicon germanium and SiGe: carbon. Short Run Press Ltd., England. Levinshtein, M.E., Rumyantsev, S.L., Shur, M.S. eds., 2001. Silicon-Germanium (SixGe1-x) in “Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe”. John Wiley & Sons, pp. 149. Madelung, O., 2012. Semiconductors: data handbook. Springer Science & Business Media. Oswald, J., Wintersberger, E., Bauer, G., Belytschko, T., 2011. A higher-order extended finite element method for dislocation energetics in strained layers and epitaxial islands. International Journal for Numerical Methods in Engineering 85 (7), 920 – 938. Sakai, A., Taoka, N., Nakatsuka, O., Zaima, S., Yasuda, Y., 2005. Pure-edge dislocation network for strain- relaxed Si Ge∕ Si (001) systems. Applied Physics Letters 86(22), 221916. Skiba, O., Gracie, R. and Potapenko, S., 2013. Electromechanical simulations of dislocations. Modelling and Simulation in Materials Science and Engineering, 21(3), 035003. Vanderschaeve, G., Levade, C., Caillard, D., 2001. Dislocation mobility and electronic effects in semiconductor compounds. Journal of Microscopy 203(1), 72-83. Watling, J.R., Paul, D.J., 2011. A study of the impact of dislocations on the thermoelectric properties of quantum wells in the Si/SiGe materials system. Journal of Applied Physics, 110(11), 114508. Yonenaga, I., 2013. Dislocation dynamics in SiGe alloys. In Journal of Physics: Conference Series 471(1), 012002). IOP Publishing. Yonenaga, I., Werner, M., Bartsch, M., Messerschmidt, U., Werner, E.R., 1999. Recombination‐Enhanced Dislocation Motion in Si Ge and Ge. physica status solidi (a) 171(1), 35-40.