PSI - Issue 42

Available online at www.sciencedirect.com Available online at www.sciencedirect.com ^ĐŝĞŶĐĞ ŝƌĞĐƚ Structural Integrity Procedia 00 (2019) 000 – 000

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Procedia Structural Integrity 42 (2022) 863–870

© 2022 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (https://creativecommons.org/licenses/by-nc-nd/4.0) Peer-review under responsibility of the scientific committee of the 23 European Conference on Fracture – ECF23 Abstract Si x Ge 1-x is an alloy made of two semiconductor materials from group Ⅳ -A of the periodic table. The performance of semiconductors results in higher temperatures due to electric field formation and also they are exposed to elevated atmospheric temperatures. Here, the Si x Ge 1-x domain with one free surface at the left is considered under thermal loads at different compositions when the edge dislocation is present in the domain. The Extended Finite Element Method (XFEM) is used for numerical modeling of the problem. The lattice constant, thermal conductivity, electrical conductivity and thermal expansion coefficient are functions of the amount of Si (x Si ) in the alloy. The dislocation Burgers vector is also dependent on the Si concentration as its magnitude is defined in terms of the lattice constant. The XFEM formulation introduces the Volterra type edge dislocation through the enrichment functions. Firstly, the discrete heat equilibrium equation is solved and then considering the thermal strains, the discrete force equilibrium equation is solved. The two cases of the heat flux acting normal to the glide plane and along the glide plane of the dislocation are considered for different temperatures. The results indicate an increase in the Peach-Koehler force with the increase in ‘x Si ’ greater than 0.2 for both the cases of the heat flux application at all temperatures. However, at the lower concentration of Si i.e. below 0.2, the Peach-Koehler force is affected differently. © 2020 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of 23 European Conference on Fracture - ECF23 Keywords: Dislocation; Peach-Koehler force; Semiconductor alloy; XFEM 1. Introduction The electronic world revolves around semiconductors, having the application in integrated circuits in the form of diodes and transistors. Si x Ge 1-x is a semiconductor alloy having application in microelectronic and optoelectronic 23 European Conference on Fracture - ECF23 XFEM simulation of dislocation in Si x Ge 1-x alloy under thermal loads Neha Duhan a,* , B. K. Mishra a , I.V. Singh a a Department of Mechanical and Industrial Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand-247667, India

* Corresponding author. Tel.: +91-1332- 28-4992 E-mail address : dneharajkumar@me.iitr.ac.in

2452-3216 © 2020 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/) Peer-review under responsibility of 23 European Conference on Fracture - ECF23

2452-3216 © 2022 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (https://creativecommons.org/licenses/by-nc-nd/4.0) Peer-review under responsibility of the scientific committee of the 23 European Conference on Fracture – ECF23 10.1016/j.prostr.2022.12.109